CoolSiC™ – Revolution to rely on
SiC solutions enabling radical new product designs with best system cost-performance ratio
SiC器件特性和优势
- The combination of a fast silicon based switch with a SiC diode – is oft en termed a “hybrid” solution.
- 用SiC器件的变换器，体积可以降低到1/3，重量可以降低到原来的25%
- Low device capacitances
- Temperature independent switching losses（
如何理解不受温度影响的开关损耗） - Intrinsic diode with low reverse recovery charge
- Threshold-free on-state characteristics
- Superior gate oxide reliability
- Best in class switching and conduction losses
- IGBT compatible driving (+15 V)
- Threshold voltage, > 4 V
- Short-circuit robustness
- Highest efficiency for reduced cooling effort
- The products portfolio will be extended within the next years. The first step is a roll-out of different topologies like Sixpack and Halfbridge covering a power range from 2kW until 200kW. 产品组合将在未来几年内扩展。 第一步是推出各种拓扑，例如Sixpack和Halfbridge，覆盖从2kW到200kW的功率范围。
现有MOSFET产品
SiC MOSFET 单管和模块
注意封装的命名对应关系
TO-xxx : TO — transistor outline
驱动芯片产品
命名规则
- 单管
- 模块
SiC Schottky diodes G5
SiC材料对于Schottky 二极管的性能提升是巨大的。传统的基于Si材料的schottky二极管耐压只能达到100~150V，这一点可以从infineon的官网产品中看出，其最高耐压等级为70V。而用碳化硅材料的肖特基二极管耐压等级可以到1700V，天差地别。
肖特基二极管有什么好处呢？fast switching
- No reverse recovery charge
- Low turn-off loss
- Purely capacitive switching
- High operating temperature
- Reduction of CoolMOS™ or IGBT turn-on loss
- Switching loss independent from load current, switching speed and temperature